IRFB4332PBF

The IRFB4332PBF from Infineon Technologies is a HEXFET Power MOSFET specifically engineered for applications such as sustain, energy recovery, and pass switching in Plasma Display Panels (PDPs). This device utilizes advanced process technology to achieve a low on-resistance per silicon area and a low E PULSE rating, which helps reduce power dissipation.

Key electrical characteristics include a minimum drain-to-source breakdown voltage of 250V and a typical static drain-to-source on-resistance of 29 mΩ at 10V gate-source voltage. The MOSFET operates with a gate-to-source voltage range of ±30V and has a gate threshold voltage between 3.0V and 5.0V. It offers a continuous drain current of 60A at 25°C case temperature and 42A at 100°C case temperature, with a pulsed drain current capability of up to 230A.

Designed for ruggedness and reliability, the IRFB4332PBF boasts a high repetitive peak current capability of 120A at 100°C and features short fall and rise times for fast switching. The operating junction temperature range is -55°C to +175°C, providing improved ruggedness. The component is housed in a TO-220AB package, suitable for through-hole mounting.

This MOSFET is optimized for key parameters that enhance performance in PDP driving applications, offering a robust and efficient solution. Its features include high repetitive peak current capability and a 175°C operating junction temperature.