IRFB4332PBF The Vishay Dale IRFB4332PBF is a Power MOSFET designed for PDP sustain, energy recovery, and pass switch applications. It features a 250V breakdown voltage and a 175°C maximum operating junction temperature.
Mfr Part #:

IRFB4332PBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale IRFB4332PBF is a Power MOSFET designed for PDP sustain, energy recovery, and pass switch applications. It features a 250V breakdown voltage and a 175°C maximum operating junction temperature.
✓ Total Stock: 28,277 pcs
$ Price Range: $0.71

IRFB4332PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
17,683 pcs
17683 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
10,594 pcs
10594 pcs On Request 1 On Request On Request 18+ On Request On Request

IRFB4332PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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AEC Qualified
Automotive Grade
Industrial Grade
Medical Grade
Military Grade

IRFB4332PBF Description

Short technical summary and product information.

The Vishay Dale IRFB4332PBF is a HEXFET Power MOSFET specifically engineered for applications such as sustain, energy recovery, and pass switching in Plasma Display Panels. This device utilizes advanced processing technology to achieve a low on-resistance per silicon area and a low E PULSE rating, which helps reduce power dissipation.

 

Key electrical characteristics include a 250V minimum Drain-to-Source Breakdown Voltage (BVDSS) and a typical Static Drain-to-Source On-Resistance (RDS(on)) of 29 mΩ at 10V Gate-to-Source Voltage. The MOSFET operates with a Gate Threshold Voltage (VGS(th)) between 3.0V and 5.0V. It is rated for a continuous drain current of up to 60A at 25°C case temperature and 42A at 100°C.

 

With a maximum continuous power dissipation of 390W at 25°C and 200W at 100°C, the IRFB4332PBF offers robust thermal performance. The operating junction and storage temperature range is from -55°C to +175°C, enhancing its ruggedness and reliability. The device is housed in a TO-220AB package, suitable for through-hole mounting.

IRFB4332PBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFB4332PBF Power MOSFET
Subcategory: Power MOSFET

IRFB4332PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFB4332PBF Estimated Pricing

Qty Low High
1+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB4332PBF Features

  • 250V minimum breakdown voltage.
  • Low 29mΩ typical on-resistance.
  • 175°C maximum operating temperature.
  • TO-220AB package for through-hole mounting.
  • Optimized for PDP sustain applications.

IRFB4332PBF Applications

  • Used in PDP sustain circuits.
  • Suitable for energy recovery systems.
  • Designed for pass switch applications.
  • Ideal for plasma display panels.

IRFB4332PBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the IRFB4332PBF?

The maximum continuous drain current is 60A at 25°C case temperature and 42A at 100°C case temperature, with a VGS of 10V.

What is the operating temperature range for the IRFB4332PBF?

The operating junction and storage temperature range is -55°C to +175°C.

What is the static drain-to-source on-resistance of the IRFB4332PBF?

The typical static drain-to-source on-resistance is 29 mΩ at 10V gate-to-source voltage and 35A drain current.

What package type is the IRFB4332PBF supplied in?

The IRFB4332PBF is supplied in a TO-220AB package.

What is the RoHS status of the IRFB4332PBF?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IRFB4332PBF?

The Moisture Sensitivity Level is 1 Unlimited.

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