IRFB4332PBF N-Channel 250V 60A Power MOSFET in TO-220AB package. Low on-resistance of 29mΩ typical at 10V.
Mfr Part #:

IRFB4332PBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 250V 60A Power MOSFET in TO-220AB package. Low on-resistance of 29mΩ typical at 10V.
✓ Total Stock: 4,000 pcs
$ Price Range: $1.77 - $3.53

IRFB4332PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
400 pcs
400 pcs On Request 1 On Request On Request On Request On Request On Request

IRFB4332PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB4332PBF Description

Short technical summary and product information.

The IRFB4332PBF is an N-Channel HEXFET Power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. It features a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 60A at 25°C. The device offers a typical on-resistance (Rds(on)) of 29mΩ at Vgs = 10V, minimizing conduction losses.

 

This MOSFET is optimized for Plasma Display Panel (PDP) sustain, energy recovery, and pass switch applications. It provides a high repetitive peak current capability of 120A at 100°C and a pulsed drain current rating of 230A. The device operates over a junction temperature range of -40°C to 175°C, ensuring robust performance in demanding environments.

 

The IRFB4332PBF is housed in a through-hole TO-220-3 (TO-220AB) package, suitable for easy mounting on heatsinks. Key electrical characteristics include a maximum gate-to-source voltage of ±30V, input capacitance of 5860pF, and total gate charge of 150nC. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).

IRFB4332PBF Quick Information

Product Type: Power MOSFET
Series: HEXFET
Canonical Name: Infineon IRFB4332PBF N-Channel HEXFET Power MOSFET, 250V Vds, 60A Id, TO-220AB
Subcategory: N-Channel MOSFET

IRFB4332PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IRFB4332PBF Estimated Pricing

Qty Low High
1+ $3.53 $3.53
10+ $3.18 $3.18
100+ $2.60 $2.60
500+ $2.21 $2.21
1,000+ $1.87 $1.87
2,000+ $1.77 $1.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB4332PBF Features

  • N-Channel 250V 60A Power MOSFET.
  • Low typical on-resistance of 29mΩ.
  • High repetitive peak current of 120A.
  • Operating junction temperature up to 175°C.
  • Through-hole TO-220AB package.

IRFB4332PBF Applications

  • PDP sustain and energy recovery circuits.
  • High-efficiency power supply switching.
  • Motor drive and inverter applications.
  • DC-DC converter and load switching.

IRFB4332PBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRFB4332PBF?

The maximum drain-to-source voltage (Vdss) is 250V.

What is the continuous drain current rating at 25°C?

The continuous drain current (Id) is 60A at Tc = 25°C with Vgs = 10V.

What is the typical on-resistance of this MOSFET?

The typical on-resistance (Rds(on)) is 29mΩ at Vgs = 10V and Id = 35A.

What package does the IRFB4332PBF come in?

It is available in a through-hole TO-220-3 (TO-220AB) package.

What is the operating temperature range?

The operating junction temperature range is -40°C to 175°C.

Is the IRFB4332PBF RoHS compliant?

Yes, it is marked as RoHS3 compliant (unverified).

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