Mfr Part #:

IRFB4321PBF

Mfr Name: Infineon

The Infineon IRFB4321PBF is an N-channel Power MOSFET with a 150V breakdown voltage and 85A continuous drain current. It features a low RDS(on) of 12mΩ typical.

✓ Total Stock: 36,201 pcs

$ Price Range: $5.00

IRFB4321PBF Available from 5 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	29,970 pcs On Request	29970 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	3,209 pcs On Request	3209 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	2,000 pcs On Request	2000 pcs	On Request	1	On Request	On Request	2021+	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	522 pcs On Request	522 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	500 pcs On Request	500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFB4321PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Input Capacitance	4460pF

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IRFB4321PBF Description

Short technical summary and product information.

The Infineon IRFB4321PBF is an N-channel Power MOSFET designed for high-efficiency applications. It offers a continuous drain current of 85A at 25°C and a maximum drain-to-source breakdown voltage of 150V.

Key electrical characteristics include a typical static drain-to-source on-resistance of 12mΩ at 10V gate-source voltage and 85A drain current. The device also features a gate threshold voltage ranging from 3V to 5V and a total gate charge of 71nC typical.

With a maximum power dissipation of 120W at 25°C, the IRFB4321PBF is suitable for applications requiring efficient power handling. It is housed in a TO-220AB package, facilitating through-hole mounting.

This MOSFET is well-suited for motion control, high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and hard-switched or high-frequency circuits.

IRFB4321PBF Quick Information

Product Type: N-channel MOSFET

Canonical Name: Infineon IRFB4321PBF N-channel Power MOSFET

Subcategory: N-channel

IRFB4321PBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRFB4321PBF Estimated Pricing

Qty	Low	High
1+	$5.00	$5.00

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB4321PBF Features

150V drain-to-source breakdown voltage.
85A continuous drain current.
12mΩ typical on-resistance.
Low gate charge for improved switching.
TO-220AB package for through-hole mounting.

IRFB4321PBF Applications

Motion control applications.
High efficiency synchronous rectification.
Uninterruptible power supplies.
Hard switched circuits.
High frequency circuits.

IRFB4321PBF FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source breakdown voltage?

The maximum drain-to-source breakdown voltage is 150V.

What is the typical static drain-to-source on-resistance?

The typical static drain-to-source on-resistance is 12mΩ at VGS = 10V and ID = 85A.

What is the continuous drain current at 25°C?

The continuous drain current at TC = 25°C is 85A.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +175°C.

What package type is the IRFB4321PBF supplied in?

The IRFB4321PBF is supplied in a TO-220AB package.

What is the typical total gate charge?

The typical total gate charge is 71nC.

IRFB4321PBF Alternate Parts

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IRFP4321PBF

Infineon

The Infineon IRFP4321PBF is an N-channel MOSFET designed for high-efficiency applications. It offers a 150V drain-source breakdown voltage and a continuous drain current of 78A.

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