| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Mounting Type | |
| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB4310ZPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source breakdown voltage of 100V and a continuous drain current of 120A (package limited) or 127A (silicon limited) at 25°C. The device offers a low typical on-resistance of 4.8mOhm (max 6.0mOhm) at Vgs=10V, making it suitable for high-efficiency power switching applications.
This MOSFET is designed for high-speed switching and is characterized for hard-switched and high-frequency circuits. It has a maximum power dissipation of 250W at 25°C case temperature and an operating junction temperature range of -55°C to 175°C. The gate threshold voltage is between 2.0V and 4.0V, and the gate charge is 170nC maximum at Vgs=10V.
The device is housed in a TO-220AB package with through-hole mounting, suitable for standard PCB assembly. It is lead-free and RoHS compliant (unverified). The part is also available in D2Pak (IRFS4310ZPbF) and TO-262 (IRFSL4310ZPbF) package variants.
Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.15 | $4.15 |
| 10+ | $2.72 | $2.72 |
| 50+ | $2.11 | $2.11 |
| 100+ | $1.91 | $1.91 |
| 500+ | $1.56 | $1.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V minimum.
120A at Tc=25°C (package limited) or 127A (silicon limited).
Typical 4.8mOhm, maximum 6.0mOhm at Vgs=10V.
TO-220-3 (TO-220AB) through-hole.
-55°C to 175°C junction temperature.
It is listed as RoHS3 compliant, but this is unverified.
2.0V to 4.0V at Id=150µA.