| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,484 pcs
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9484 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5,030 pcs
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5030 pcs | On Request | 1 | On Request | On Request | 1549+ | On Request | On Request | |
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1,720 pcs
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1720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRFB4310PBF is a high-performance N-channel HEXFET Power MOSFET. It is engineered for demanding applications such as high efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits.
Key electrical characteristics include a Drain-to-Source Breakdown Voltage (VDS) of 100V and a low Static Drain-to-Source On-Resistance (RDS(on)) typically measuring 5.6mΩ at 25°C. The continuous drain current (ID) is rated at 130A at 25°C and 92A at 100°C.
This MOSFET offers enhanced body diode dV/dt and dI/dt capability, along with improved gate, avalanche, and dynamic dV/dt ruggedness. It is available in the TO-220AB package, suitable for through-hole mounting.
The operating junction and storage temperature range is -55°C to +175°C. The component is RoHS compliant and lead-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.90 | $4.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Breakdown Voltage (VDS) is 100V.
The typical Static Drain-to-Source On-Resistance (RDS(on)) is 5.6mΩ at 25°C.
The continuous drain current is 130A at 25°C and 92A at 100°C.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFB4310PBF is available in the TO-220AB package.
Yes, the IRFB4310PBF is RoHS3 Compliant.