| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,742 pcs
|
2742 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB4310PBF is an N-Channel enhancement-mode power MOSFET manufactured by Infineon Technologies. It is part of the HEXFET series and is designed for high-efficiency power conversion applications. The device is rated for a maximum drain-to-source voltage of 100V and a continuous drain current of 130A at Tc=25°C, with a reduced rating of 92A at Tc=100°C. Maximum power dissipation is 300W at Tc=25°C.
This MOSFET features low on-resistance with a typical value of 5.6mΩ and a maximum of 7.0mΩ at Vgs=10V and Id=75A. Gate threshold voltage ranges from 2.0V to 4.0V, and total gate charge at Vgs=10V is 250nC. Input capacitance is 7670pF at Vds=50V. The device is rated for single-pulse avalanche energy of 300mJ.
The IRFB4310PBF is offered in a TO-220-3 through-hole package, also known as TO-220AB. Thermal resistance from junction to case is 0.50°C/W, and the operating junction temperature range is -55°C to 175°C. The part is lead-free, as indicated by the PbF suffix.
Typical applications include high-efficiency synchronous rectification in switch-mode power supplies, uninterruptible power supplies, high-speed power switching, and hard-switched high-frequency circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.62 | $4.62 |
| 10+ | $2.37 | $2.37 |
| 100+ | $2.13 | $2.13 |
| 500+ | $1.77 | $1.77 |
| 1,000+ | $1.72 | $1.72 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
The continuous drain current is 130A at Tc=25°C and 92A at Tc=100°C, with Vgs=10V.
The typical drain-to-source on-resistance is 5.6mΩ and the maximum is 7.0mΩ at Vgs=10V and Id=75A.
The operating junction temperature range is -55°C to 175°C.
The device is offered in a TO-220-3 through-hole package, also designated TO-220AB.
The existing database lists the part as RoHS3 compliant, but this status is unverified. The datasheet indicates the part is lead-free (PbF).
Maximum power dissipation is 300W at Tc=25°C.