| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
197 pcs
|
197 pcs | On Request | 1 | On Request | On Request | 1542+ | On Request | On Request | |
|
99 pcs
|
99 pcs | On Request | 1 | On Request | On Request | 1036 | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 1542+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Tape & Reel |
The IRFB42N20DPBF is an N-Channel HEXFET Power MOSFET manufactured by International Rectifier. This component is designed for applications requiring high frequency DC-DC converters, motor control, and uninterruptible power supplies.
Key electrical specifications include a continuous drain current of 42.6A and a maximum pulse current of 180A. The drain-source voltage is rated at 200V, with a typical threshold voltage of 5.5V. The on-resistance is specified as 55 mOhm at a gate-source voltage of 10V.
This MOSFET features a power dissipation capability of 300W and a low junction-to-case thermal resistance of 0.5°C/W, ensuring efficient thermal management. It is housed in a TO-220AB package, suitable for through-hole mounting.
Additional specifications include a maximum drain current of 44A and a maximum gate-source voltage of 5.5V. The part is listed with RoHS3 compliance and MSL 1 rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 42.6 A.
The drain-source voltage is 200 V.
The on-resistance is 55 mOhm at a gate-source voltage of 10V.
The IRFB42N20DPBF is available in a TO-220AB package.
The power dissipation is 300 W.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.