| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,020 pcs
|
8020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,162 pcs
|
2162 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The Infineon IRFB4229PBF is an N-channel HEXFET Power MOSFET. It is designed for high performance and efficiency in power applications. This MOSFET offers a maximum continuous drain current of 91A at 25°C and 100°C, with a drain-source voltage of 250V.
The device features a low on-resistance of 38 mOhm at a gate-source voltage of 10V, contributing to reduced conduction losses. The operating junction temperature range is from -55°C to 175°C, and it has a maximum power dissipation of 300W at 25°C.
Packaged in a TO-220AB through-hole package, the IRFB4229PBF is suitable for various power switching and control applications. Its robust design and electrical characteristics make it a reliable component for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.44 | $4.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source voltage is 250V.
The typical on-resistance is 38 mOhm at a gate-source voltage of 10V.
The continuous drain current is 91A at 25°C and 100°C.
The operating junction and storage temperature range is -55 to 175 °C.
The IRFB4229PBF is supplied in a TO-220AB package.
