Mfr Part #:

IRFB4229PBF

N-Channel MOSFET with 250V drain-to-source voltage, 46A drain current, and 46mΩ max on-resistance in a TO-220-3 through-hole package.

✓ Total Stock: 2,340 pcs

$ Price Range: $1.69 - $4.44

IRFB4229PBF Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	2,340 pcs On Request	2340 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFB4229PBF Description

Short technical summary and product information.

The IRFB4229PBF is an N-channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a maximum drain-to-source voltage of 250V and a continuous drain current of 46A at case temperature Tc. The device's typical drain-to-source on-resistance is 38mΩ at 10V gate drive, with a maximum of 46mΩ at 26A and 10V.

Key electrical parameters include a maximum gate charge of 110nC at 10V and input capacitance of 4560pF at 25V drain-source voltage, enabling efficient switching in power supply and energy recovery applications. The MOSFET can dissipate up to 330W at case temperature and operates across a junction temperature range of -40°C to 175°C.

The device is offered in a standard TO-220-3 through-hole package (TO-220AB) for easy mounting on PCBs. The datasheet highlights its suitability for PDP sustain, energy recovery, and pass switch circuits, as well as class-D audio amplifier half-bridge designs in the 300W-500W range. Repetitive avalanche capability enhances robustness for demanding applications.

IRFB4229PBF Quick Information

Product Type: MOSFET

Series: HEXFET

Canonical Name: IRFB4229PBF – N-Channel MOSFET 250V 46A TO-220AB

Subcategory: MOSFET

IRFB4229PBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRFB4229PBF Estimated Pricing

Qty	Low	High
1+	$4.44	$4.44
10+	$2.92	$2.92
50+	$2.27	$2.27
100+	$2.06	$2.06
500+	$1.69	$1.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB4229PBF Features

N-channel MOSFET rated 250V drain-source.
Continuous drain current 46A at case temp.
46 milliohm max on-resistance at 10V.
Gate charge 110nC for fast switching.
TO-220-3 through-hole package.

IRFB4229PBF Applications

For PDP sustain and energy recovery.
Pass switch and power supply circuits.
Class-D audio amplifier half-bridge.
High-reliability repetitive avalanche applications.

IRFB4229PBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the IRFB4229PBF?

250V

What is the continuous drain current rating?

46A at case temperature (Tc).

What package is the IRFB4229PBF available in?

TO-220-3 (TO-220AB) through-hole package.

What is the operating junction temperature range?

-40°C to 175°C

What is the typical on-resistance?

38 milliohms at 10V gate drive.

What is the maximum gate charge?

110nC at 10V gate-source voltage.

What is the maximum power dissipation?

330W at case temperature (Tc).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	46 A @ Tc
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4560 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-40°C ~ 175°C (TJ)
Power Dissipation (Max)	330 W @ Tc
Rds On (Max) @ Id, Vgs	46 mΩ
Storage Temperature	-40°C ~ 175°C
Supplier Device Package	TO-220AB
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	5 V @ 250 µA