LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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61,270 pcs
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The Infineon IRFB4227PBF is a HEXFET Power MOSFET designed for high efficiency and reliability in power applications. It offers a maximum drain-source voltage (VDS) of 200V and an avalanche drain-source voltage of 240V typical.
This MOSFET boasts a low on-resistance (RDS(ON)) of 19.7 mOhms typical at 10V gate-source voltage. It supports a continuous drain current of 130A at both 25°C and 100°C case temperature with a VGS of 10V. The pulsed drain current and repetitive peak current are also rated at 130A.
With a power dissipation of 150W at 25°C and 84W at 100°C, and a thermal resistance of 0.45°C/W (junction-to-case), the IRFB4227PBF is suitable for demanding thermal environments. It operates within a temperature range of -55°C to 175°C.
The component is housed in a TO-220AB package, designed for through-hole mounting. It supports a gate-to-source voltage of up to 20V and has a maximum soldering temperature of 300°C for 10 seconds.
| Qty | Low | High |
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| 1+ | $3.56 | $3.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 200V.
The typical on-resistance is 19.7 mOhms at 10V gate-source voltage.
The continuous drain current is 130A at 25°C and 100°C case temperature with 10V gate-source voltage.
The IRFB4227PBF is supplied in a TO-220AB package.
The operating junction and storage temperature range is -55°C to 175°C.
The junction-to-case thermal resistance is a maximum of 0.45°C/W.
