Mfr Part #:

IRFB4227PBF

N-Channel power MOSFET rated for 200V drain-source voltage and 65A continuous drain current, featuring 24mOhm maximum on-resistance.

✓ Total Stock: 2,689 pcs

$ Price Range: $1.31 - $3.56

IRFB4227PBF Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	2,568 pcs On Request	2568 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Hybrid Electronics ✓ Non-Authorised Inventory information	121 pcs On Request	121 pcs	On Request	1	On Request	On Request	1046	On Request	On Request

IRFB4227PBF Description

Short technical summary and product information.

The IRFB4227PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-voltage switching applications requiring low on-resistance and fast switching performance.

Key electrical specifications include a maximum drain-to-source voltage of 200V, continuous drain current of 65A at case temperature, and a maximum on-resistance of 24mOhm at 46A and 10V gate drive. The device features a typical gate charge of 98nC and input capacitance of 4600pF, enabling efficient gate drive design.

This MOSFET is housed in a through-hole TO-220-3 package (TO-220AB) and supports an operating junction temperature range of -40°C to 175°C. It is suitable for power supply, motor control, and class-D audio amplifier applications.

IRFB4227PBF Quick Information

Product Type: Power MOSFET

Series: IRFB

Canonical Name: IRFB4227PBF N-Channel Power MOSFET

Subcategory: Single MOSFET

IRFB4227PBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 - Unlimited

REACH Status: REACH Unaffected

IRFB4227PBF Estimated Pricing

Qty	Low	High
1+	$3.56	$3.56
10+	$2.32	$2.32
50+	$1.78	$1.78
100+	$1.61	$1.61
500+	$1.31	$1.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB4227PBF Features

200V maximum drain-source voltage.
65A continuous drain current rating.
24mOhm maximum on-resistance at 10V.
TO-220AB through-hole package.
175°C maximum junction temperature.

IRFB4227PBF Applications

Used in PDP sustain and energy recovery circuits.
Suitable for class-D audio amplifiers 300-500W.
Ideal for high-voltage power switching.
Applied in motor control and power supplies.

IRFB4227PBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IRFB4227PBF?

200V

What is the maximum continuous drain current?

65A at case temperature (Tc)

What is the on-resistance of this MOSFET?

Maximum 24mOhm at 46A drain current and 10V gate-source voltage

What package is the IRFB4227PBF available in?

TO-220-3 (TO-220AB) through-hole package

What is the operating temperature range?

-40°C to 175°C junction temperature

Is the IRFB4227PBF RoHS compliant?

RoHS3 compliant (unverified)

What is the gate charge of this MOSFET?

Maximum 98nC at 10V gate-source voltage

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	65A (Tc)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4600 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-40°C ~ 175°C (TJ)
Power Dissipation (Max)	330W (Tc)
Rds On (Max) @ Id, Vgs	24mOhm
Supplier Device Package	TO-220AB
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA