| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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750 pcs
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750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present | |
| Storage Temperature |
The IRFB4227 is an N-Channel MOSFET Transistor manufactured by Vishay Dale. It is designed for efficient power switching applications, featuring a maximum drain-source voltage of 200V and a continuous drain current of 65A. The device boasts a low static drain-source on-resistance of 24mΩ at a gate-source voltage of 10V and a drain current of 46A.
Key electrical characteristics include a gate threshold voltage ranging from 3V to 5V. The operating junction temperature can reach up to 175℃, and it has a high repetitive peak current capability. Thermal management is supported by a channel-to-case thermal resistance of 0.45℃/W.
This MOSFET is built for robust performance with features like 100% avalanche testing and minimum lot-to-lot variations. Its enhancement mode operation and fast switching speed make it suitable for various power electronics designs. The component is rated for a maximum total dissipation of 330W at 25℃ case temperature.
The maximum drain-source voltage (Vdss) for the IRFB4227 is 200V.
The IRFB4227 MOSFET has a continuous drain current (Id) of 65A.
The drain-source on-resistance (Rds(on)) for the IRFB4227 is a maximum of 24mΩ when tested at 10V gate-source voltage and 46A drain current.
The IRFB4227 can operate at a maximum junction temperature of 175℃ and has a storage temperature range of -40℃ to 175℃.
The IRFB4227 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRFB4227 is 1.