| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,300 pcs
|
3300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
298 pcs
|
298 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB41N15DPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source voltage of 150V and continuous drain current of 41A at 25°C (29A at 100°C). The device offers a low on-resistance of 45 mΩ at Vgs=10V, enabling efficient power switching.
This MOSFET is designed for high-frequency DC-DC converters and other power management applications. It has a maximum power dissipation of 200W at Tc=25°C and a gate threshold voltage range of 3.0V to 5.5V. The input capacitance is 2520 pF at Vds=25V.
The device is available in a TO-220AB package, suitable for through-hole mounting. It is lead-free (PbF) and RoHS compliant. The operating junction temperature range is -55°C to +175°C.
150V.
TO-220AB.
-55°C to +175°C.
Yes, it is lead-free (PbF) and RoHS compliant.
45 mΩ maximum at Id=25A, Vgs=10V.
3.0V to 5.5V at Id=250µA.
200W at Tc=25°C.