| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,020 pcs
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2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,145 pcs
|
1145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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The IRFB4137PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-speed power switching applications, offering a drain-source voltage rating of 300V and a continuous drain current of 38A at 25°C case temperature. The device features a low typical on-resistance of 56mΩ (maximum 69mΩ) at Vgs=10V, enabling efficient power conversion.
This MOSFET is characterized for hard-switched and high-frequency circuits, with fully characterized capacitance and avalanche SOA. It provides improved gate, avalanche, and dynamic dV/dt ruggedness, along with enhanced body diode dV/dt and dI/dt capability. The device is lead-free and RoHS compliant.
The IRFB4137PBF is available in a TO-220 package with through-hole mounting, suitable for applications requiring high power dissipation (up to 341W at 25°C case temperature). It operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding environments.
Typical applications include switch mode power supplies (SMPS), power factor correction, and high-speed power switching circuits.
The drain-to-source voltage (Vdss) is 300V.
The continuous drain current is 38A at Tc=25°C and 27A at Tc=100°C.
The drain-source on-resistance is 56mΩ typical and 69mΩ maximum at Vgs=10V, Id=24A.
The operating junction temperature range is -55°C to 175°C.
Yes, the IRFB4137PBF is RoHS compliant and lead-free.
The IRFB4137PBF is available in a TO-220-3 package with through-hole mounting.
The maximum power dissipation is 341W at Tc=25°C.