IRFB4127PBF N-Channel MOSFET, 200V drain-source breakdown voltage, 76A continuous drain current (Tc=25°C), typical 17mOhm on-resistance, in a TO-220AB through-hole package.
Mfr Part #:

IRFB4127PBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 200V drain-source breakdown voltage, 76A continuous drain current (Tc=25°C), typical 17mOhm on-resistance, in a TO-220AB through-hole package.
✓ Total Stock: 1,049 pcs
$ Price Range: $2.01 - $4.99

IRFB4127PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
590 pcs
590 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
459 pcs
459 pcs On Request 1 On Request On Request On Request On Request On Request

IRFB4127PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB4127PBF Description

Short technical summary and product information.

The IRFB4127PBF is a 200V N-Channel MOSFET from Infineon Technologies, part of the HEXFET power MOSFET family. It features a continuous drain current rating of 76A at 25°C (54A at 100°C) and a maximum Rds(on) of 20mOhm at 44A, 10V with a typical value of 17mOhm. The device is capable of 300A pulsed drain current and offers a single pulse avalanche energy rating of 300mJ.

 

The MOSFET provides a gate threshold voltage range of 3.0V to 5.0V and a maximum gate charge of 150nC at 10V, enabling efficient switching in high-frequency circuits. Its input capacitance (Ciss) is 5380pF at Vds=50V. The device is designed for ruggedness with improved gate, avalanche, and dynamic dV/dt performance.

 

Packaged in a through-hole TO-220AB (TO-220-3) case with a lead-free finish, it offers a maximum power dissipation of 375W at 25°C case temperature. The operating junction temperature range is -55°C to 175°C, with a junction-to-case thermal resistance of 0.4°C/W.

IRFB4127PBF Quick Information

Product Type: MOSFET
Series: IRFB4127
Canonical Name: IRFB4127PBF
Subcategory: Power MOSFET

IRFB4127PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFB4127PBF Estimated Pricing

Qty Low High
1+ $4.99 $4.99
10+ $3.19 $3.19
100+ $2.74 $2.74
500+ $2.30 $2.30
1,000+ $2.12 $2.12
2,000+ $2.01 $2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB4127PBF Features

  • 76A continuous drain current at 25°C.
  • 20mOhm maximum on-resistance at 44A.
  • 200V drain-source breakdown voltage rating.
  • 300mJ single pulse avalanche energy rating.
  • Through-hole TO-220AB lead-free package.

IRFB4127PBF Applications

  • High efficiency synchronous rectification in SMPS.
  • Uninterruptible power supply (UPS) circuits.
  • High speed power switching applications.
  • Hard switched and high frequency circuits.

IRFB4127PBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFB4127PBF?

200V minimum at TJ=25°C.

What is the maximum continuous drain current at 25°C?

76A at Tc=25°C, Vgs=10V.

What is the typical on-resistance of this MOSFET?

17mOhm typical, 20mOhm maximum at Id=44A, Vgs=10V.

What package is the IRFB4127PBF available in?

Through-hole TO-220-3 (TO-220AB).

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the IRFB4127PBF RoHS compliant?

The datasheet states the component is lead-free. RoHS status is unverified.

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