IRFB4110PBF N-Channel MOSFET from Infineon Technologies, 100V drain-source voltage, 120A continuous drain current (package limited), 4.5mΩ Rds(on) at 75A, 10V. Housed in a TO-220AB through-hole package.
Mfr Part #:

IRFB4110PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies, 100V drain-source voltage, 120A continuous drain current (package limited), 4.5mΩ Rds(on) at 75A, 10V. Housed in a TO-220AB through-hole package.
✓ Total Stock: 6 pcs
$ Price Range: $1.54 - $4.10

IRFB4110PBF Available from 1 distributor

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✓ Non-Authorised
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IRFB4110PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB4110PBF Description

Short technical summary and product information.

The IRFB4110PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source voltage rating of 100V and a continuous drain current of 180A (silicon limited) or 120A (package limited at 25°C). The device offers a low maximum on-resistance of 4.5mΩ at 75A and 10V, with a typical value of 3.7mΩ. Gate charge is 210nC maximum at 10V, and input capacitance is 9620pF at 50V.

 

This MOSFET is designed for high efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, and high speed power switching applications. It provides improved gate, avalanche, and dynamic dv/dt ruggedness. The device is fully characterized for capacitance and avalanche, and features an enhanced body diode dv/dt and dI/dt capability.

 

The IRFB4110PBF is housed in a TO-220AB through-hole package (TO-220-3) and is supplied in tubes of 50 pieces. It is RoHS3 compliant, lead-free, and halogen-free. Operating junction temperature range is -55°C to 175°C, with a maximum power dissipation of 370W at 25°C case temperature.

IRFB4110PBF Quick Information

Product Type: Power MOSFET
Series: HEXFET
Canonical Name: Infineon IRFB4110PBF N-Channel Power MOSFET
Subcategory: Single MOSFET

IRFB4110PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

IRFB4110PBF Estimated Pricing

Qty Low High
1+ $4.10 $4.10
10+ $2.69 $2.69
50+ $2.08 $2.08
100+ $1.89 $1.89
500+ $1.54 $1.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB4110PBF Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Low on-resistance of 4.5mΩ maximum.
  • High continuous drain current up to 120A.
  • TO-220AB through-hole package.
  • RoHS compliant and halogen-free.

IRFB4110PBF Applications

  • Used in high efficiency synchronous rectification circuits.
  • Ideal for uninterruptible power supplies.
  • Suitable for high speed power switching applications.
  • Designed for hard switched and high frequency circuits.

IRFB4110PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFB4110PBF?

The drain-source voltage rating is 100V.

What package is the IRFB4110PBF available in?

It is available in a TO-220-3 (TO-220AB) through-hole package.

What is the operating temperature range of the IRFB4110PBF?

The operating junction temperature range is -55°C to 175°C.

Is the IRFB4110PBF RoHS compliant?

Yes, it is RoHS3 compliant, lead-free, and halogen-free.

What is the maximum continuous drain current of the IRFB4110PBF?

The maximum continuous drain current is 120A at 25°C (package limited) and 180A (silicon limited).

What is the typical on-resistance of the IRFB4110PBF?

The typical on-resistance is 3.7mΩ, with a maximum of 4.5mΩ at 75A and 10V.

What is the gate charge of the IRFB4110PBF?

The maximum gate charge is 210nC at 10V.

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