| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFB4110 is a HEXFET Power MOSFET from International Rectifier, designed for power switching applications. This N-Channel MOSFET features a breakdown voltage of 100V and a continuous current rating of 180A.
Key electrical characteristics include a maximum on-resistance (RDS(on)) of 4.5mΩ, an input capacitance of 9.62nF, a rise time of 67ns, and a fall time of 88ns. The device has a gate threshold voltage of 4V.
Packaged in a TO-220AB through-hole configuration, the IRFB4110 is suitable for various power management tasks. It can operate within a wide temperature range from -55°C to 175°C and has a maximum power dissipation of 370W.
The breakdown voltage of the IRFB4110 is 100V.
The IRFB4110 has a continuous current rating of 180A.
The maximum on-resistance for the IRFB4110 is 4.5mΩ.
The IRFB4110 is supplied in a TO-220AB package.
The IRFB4110 operates between -55°C and 175°C.