| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,085 pcs
|
8085 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
8,000 pcs
|
8000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,431 pcs
|
1431 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRFB4020PBF is a digital audio MOSFET specifically engineered for Class-D audio amplifier applications. It utilizes advanced processing techniques to achieve low on-resistance per silicon area, contributing to improved efficiency.
Key electrical characteristics include a Drain-to-Source Voltage (Vds) of 200V, a continuous drain current of 52A at 25°C, and a typical on-resistance (RDS(on)) of 80mΩ at 10V gate-source voltage. The device also features optimized gate charge (Qg) and gate-source charge (Qsw) for better Total Harmonic Distortion (THD) and efficiency, along with low reverse recovery charge (QRR) for reduced EMI.
This MOSFET is built for ruggedness with a maximum operating junction temperature of 175°C and repetitive avalanche capability. It is housed in a TO-220AB package, suitable for through-hole mounting.
The IRFB4020PBF is designed to deliver up to 300W per channel into an 8Ω load in a half-bridge configuration, making it a robust and reliable component for high-performance audio amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.58 | $2.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-to-Source Voltage (Vds) is 200V.
The typical On-Resistance (RDS(on)) at 10V is 80mΩ.
The maximum operating junction temperature is 175°C.
The IRFB4020PBF is supplied in a TO-220AB package.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH Status is REACH Unaffected.