| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,077 pcs
|
1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
170 pcs
|
170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon IRFB38N20DPBF is an N-channel Power MOSFET featuring a 200V drain-to-source breakdown voltage and a maximum on-resistance of 54 mΩ at 10V gate-to-source voltage and 26A drain current. It can handle a continuous drain current of up to 43A at 25°C case temperature.
This MOSFET is suitable for applications such as high-frequency DC-DC converters and plasma display panels. It is available in TO-220AB, TO-262, and D2-Pak packages, offering flexibility for different mounting requirements. The operating junction temperature range is -55°C to +175°C.
Key electrical characteristics include a gate threshold voltage between 3V and 5V, and a maximum gate-to-source voltage of ±30V. The device also features a peak diode recovery dv/dt of 9.5 V/ns.
Thermal performance is supported by a junction-to-case thermal resistance of 0.47°C/W and a junction-to-ambient thermal resistance of 40°C/W when PCB mounted. Power dissipation is rated at 300W maximum at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.73 | $3.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 43A at 25°C case temperature.
The drain-to-source breakdown voltage is 200V.
The maximum static drain-to-source on-resistance is 54mΩ at 10V gate-to-source and 26A drain current.
The operating junction and storage temperature range is -55°C to +175°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.