| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The IRFB3806PBF is a high-performance N-Channel Power MOSFET manufactured by Infineon Technologies. It is designed for applications requiring high efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits.
Key electrical specifications include a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 43A. The typical on-resistance (Rds(on)) is 12.6 mOhm when measured at a gate-source voltage (Vgs) of 10V. The maximum gate-source voltage is rated at 4V.
This MOSFET comes in a TO-220AB package, suitable for through-hole mounting. It offers a power dissipation of 71W and a pulse current (Idm) capability of 170A. The typical gate threshold voltage (Vgs Typ) is 4V.
The IRFB3806PBF is part of the HEXFET Power MOSFET family, utilizing proven silicon processes to provide a wide portfolio of devices for various power management needs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
43 A.
12.6 mOhm at Vgs=10V.
TO-220AB.
71 W.
170 A.
4 V.
