IRFB3806PBF N-Channel MOSFET with 60V drain-source breakdown voltage and 43A continuous drain current. Features low on-resistance of 15.8mOhm max at 10V gate drive.
Mfr Part #:

IRFB3806PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 60V drain-source breakdown voltage and 43A continuous drain current. Features low on-resistance of 15.8mOhm max at 10V gate drive.
✓ Total Stock: 1,470 pcs
$ Price Range: $0.55 - $2.14

IRFB3806PBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,470 pcs
1470 pcs On Request 1 On Request On Request On Request On Request On Request

IRFB3806PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB3806PBF Description

Short technical summary and product information.

The IRFB3806PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source voltage (Vdss) of 60V and a continuous drain current of 43A at 25°C case temperature. The device offers a typical on-resistance of 12.6mOhm and a maximum of 15.8mOhm at 25A and 10V gate drive.

 

Designed for high efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching applications. The MOSFET is characterized for capacitance and avalanche SOA, with enhanced body diode dV/dt and dI/dt capability. It has a maximum gate charge of 30nC at 10V and input capacitance of 1150pF at 50V drain-source.

 

The device is housed in a TO-220-3 through-hole package (TO-220AB). It operates over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 71W at 25°C case temperature. Thermal resistance junction-to-case is 2.12°C/W and junction-to-ambient is 62°C/W for the TO-220 package.

IRFB3806PBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFB3806PBF N-Channel MOSFET, 60V, 43A, TO-220AB
Subcategory: N-Channel Power MOSFET

IRFB3806PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFB3806PBF Estimated Pricing

Qty Low High
1+ $2.14 $2.14
10+ $1.34 $1.34
100+ $1.16 $1.16
1,000+ $0.98 $0.98
5,000+ $0.63 $0.63
10,000+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB3806PBF Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • Continuous drain current rating of 43A at 25°C.
  • Low on-resistance of 15.8mOhm maximum at 10V.
  • TO-220AB through-hole package for easy mounting.
  • Operating temperature range from -55°C to 175°C.

IRFB3806PBF Applications

  • High efficiency synchronous rectification in SMPS.
  • Uninterruptible power supply (UPS) applications.
  • High speed power switching circuits.
  • Hard switched and high frequency circuits.

IRFB3806PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFB3806PBF?

60V.

What is the continuous drain current rating?

43A at 25°C case temperature.

What is the on-resistance of this MOSFET?

Maximum 15.8mOhm at 25A, 10V; typical 12.6mOhm.

What is the operating temperature range?

-55°C to 175°C (junction).

What package is the IRFB3806PBF available in?

TO-220-3 (TO-220AB).

Is the IRFB3806PBF RoHS compliant?

Listed as RoHS3 compliant, but this status is unverified.

What is the gate charge of this MOSFET?

Maximum 30nC at 10V gate-source voltage.

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