IRFB3407ZPBF N-Channel MOSFET rated for 75V drain-source voltage and 120A continuous drain current (package limited). Features low on-resistance of 6.4 mΩ max and is housed in a TO-220-3 through-hole package.
Mfr Part #:

IRFB3407ZPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET rated for 75V drain-source voltage and 120A continuous drain current (package limited). Features low on-resistance of 6.4 mΩ max and is housed in a TO-220-3 through-hole package.
✓ Total Stock: 3,000 pcs
$ Price Range: $1.56 - $2.60

IRFB3407ZPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 2021+ On Request On Request

IRFB3407ZPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB3407ZPBF Description

Short technical summary and product information.

The IRFB3407ZPBF is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-speed power switching applications such as battery management and hard-switched circuits.

 

With a drain-to-source breakdown voltage of 75V (minimum) and continuous drain current of 120A (package limited) or 122A (silicon limited), it delivers high current capability. The typical on-resistance is 5.0 mΩ with a maximum of 6.4 mΩ at Vgs=10V and Id=75A. Gate threshold voltage ranges from 2.0V to 4.0V. The device can handle pulsed drain currents up to 488A and has a maximum power dissipation of 230W at Tc=25°C.

 

The MOSFET features a maximum gate-to-source voltage of ±20V and input capacitance of 4750 pF at Vds=50V. Gate charge is 110 nC at Vgs=10V. It is rated for operating junction temperatures from -55°C to 175°C. The device is lead-free and RoHS3 compliant.

 

The IRFB3407ZPBF is supplied in a TO-220-3 through-hole package (TO-220AB) with a standard tube packaging of 50 units. Mounting torque is specified at 1.1 N·m for 6-32 or M3 screws. Thermal resistance junction-to-case is 0.65°C/W maximum.

IRFB3407ZPBF Quick Information

Product Type: Power MOSFET
Series: HEXFET
Canonical Name: N-Channel MOSFET, 75V, 120A, TO-220-3
Subcategory: Single MOSFET

IRFB3407ZPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFB3407ZPBF Estimated Pricing

Qty Low High
1+ $2.60 $2.60
10+ $2.24 $2.24
100+ $1.84 $1.84
500+ $1.56 $1.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB3407ZPBF Features

  • N-Channel MOSFET with 75V drain-source voltage.
  • Continuous drain current up to 120A (package limited).
  • Low on-resistance of 6.4 mΩ maximum.
  • TO-220-3 through-hole package for easy mounting.
  • Lead-free and RoHS3 compliant.

IRFB3407ZPBF Applications

  • Ideal for battery management systems.
  • Suitable for high-speed power switching.
  • Used in hard-switched and high-frequency circuits.

IRFB3407ZPBF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating?

The drain-to-source breakdown voltage is 75V minimum.

What package does the IRFB3407ZPBF come in?

It is available in a TO-220-3 through-hole package (TO-220AB).

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IRFB3407ZPBF RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the maximum drain current?

The continuous drain current is 120A (package limited) at Tc=25°C.

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