| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,356 pcs
|
2356 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
IRFB33N15DPBF is an N-Channel MOSFET from Infineon Technologies, built with metal-oxide semiconductor technology. It comes in a through-hole TO-220-3 package with supplier device package designation TO-220AB, suitable for board-level power switching applications.
This single MOSFET is rated for a maximum drain-to-source voltage of 150V and a drain current of 33A. Maximum drain-to-source on-resistance is 56mΩ at 20A drain current and 10V gate-source voltage. With a maximum power dissipation of 170W at case temperature, the device can handle substantial power in properly cooled designs. The gate drive voltage is specified at 10V, and the maximum gate-to-source voltage is ±30V.
Electrical characteristics include a maximum gate threshold voltage of 5.5V at 250µA, maximum gate charge of 90nC at 10V, and input capacitance of 2020pF at 25V. Operating junction temperature ranges from -55°C to 175°C. These parameters make the IRFB33N15DPBF suitable for DC-DC converters, motor control, power supplies, and other medium-voltage switching circuits.
| Qty | Low | High |
|---|---|---|
| 404+ | $0.68 | $0.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 150V.
It is available in a TO-220-3 through-hole package, with supplier device package TO-220AB.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant in the existing product data, though this status is unverified.
The maximum continuous drain current is 33A at case temperature.
The maximum on-resistance is 56mΩ at 20A drain current and 10V gate-source voltage.
The maximum gate charge is 90nC at 10V gate-source voltage.