| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,020 pcs
|
5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB3307ZPBF is a 75V N-Channel HEXFET Power MOSFET designed for high-efficiency power conversion. It offers a maximum continuous drain current of 120A (package limited) and 128A (silicon limited) at Tc=25°C. The device features a low typical on-resistance of 4.6mΩ and a maximum of 5.8mΩ at Vgs=10V, enabling high current handling with minimal conduction losses.
Key electrical characteristics include a gate threshold voltage range of 2.0V to 4.0V, total gate charge of 110nC at Vgs=10V, and input capacitance of 4750pF at Vds=50V. The device is rated for pulsed drain current up to 512A and single pulse avalanche energy of 140mJ. It operates over a junction temperature range of -55°C to 175°C.
The IRFB3307ZPBF is suitable for applications such as high-efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, and high-speed power switching. It is packaged in a through-hole TO-220-3 (PG-TO220-3-904) package with a maximum junction-to-case thermal resistance of 0.65°C/W.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.18 | $1.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 75V.
The maximum continuous drain current is 120A at Tc=25°C (package limited) and 128A (silicon limited).
The maximum on-resistance is 5.8mΩ at Vgs=10V, Id=75A; typical is 4.6mΩ.
The operating junction temperature range is -55°C to 175°C.
It is available in a TO-220-3 package (PG-TO220-3-904).
It is listed as RoHS3 Compliant, but this is unverified.
The total gate charge (Qg) is 110nC at Vgs=10V.