| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB3306PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is rated for a maximum drain-to-source voltage of 60V and a continuous drain current of 120A at Tc=25°C with Vgs=10V (package-limited), with a silicon-limited rating of 160A. The device offers a maximum drain-source on-resistance of 4.2mΩ at Id=75A and Vgs=10V, with a typical value of 3.3mΩ.
This MOSFET features a maximum gate charge of 120nC at Vgs=10V and input capacitance of 4520pF at Vds=50V, making it suitable for high-speed switching applications. It can dissipate up to 230W at Tc=25°C and operates over a junction temperature range of -55°C to 175°C. The device also supports single-pulse avalanche energy up to 184mJ and peak diode recovery dv/dt of 14V/ns.
Typical applications include high-efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, and high-speed power switching circuits. The device is designed for hard-switched and high-frequency circuits, with improved gate, avalanche, and dynamic dV/dt ruggedness.
The IRFB3306PBF is available in a TO-220AB through-hole package, supplied in tubes of 50 pieces. It is lead-free, RoHS compliant, and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
| 10+ | $1.63 | $1.63 |
| 50+ | $1.24 | $1.24 |
| 100+ | $1.11 | $1.11 |
| 500+ | $0.89 | $0.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
The continuous drain current is 120A at Tc=25°C with Vgs=10V (package-limited), and 160A silicon-limited. At Tc=100°C, it is 110A.
The maximum drain-source on-resistance is 4.2mΩ at Id=75A and Vgs=10V, with a typical value of 3.3mΩ.
The operating junction temperature range is -55°C to 175°C.
The IRFB3306PBF is available in a TO-220AB through-hole package, supplied in tubes of 50 pieces.
Yes, the IRFB3306PBF is RoHS compliant, lead-free, and halogen-free.
The maximum power dissipation is 230W at Tc=25°C.