| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,510 pcs
|
1510 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB3306GPBF is a 60V N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It offers a continuous drain current of 120A (package limited) and 160A (silicon limited), with a maximum drain-source on-resistance of 4.2mΩ at 10V gate drive.
This device is designed for high efficiency synchronous rectification in SMPS, UPS, and high-speed power switching applications. It features enhanced gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche SOA, and an enhanced body diode dV/dt and dI/dt capability.
The MOSFET is housed in a TO-220AB through-hole package, suitable for standard through-hole mounting. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 230W at case temperature 25°C.
The part is lead-free and halogen-free, compliant with RoHS standards (unverified).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.99 | $2.99 |
| 10+ | $2.55 | $2.55 |
| 100+ | $1.32 | $1.32 |
| 500+ | $1.08 | $1.08 |
| 1,000+ | $0.94 | $0.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 60V.
The package is TO-220-3 (supplier device package TO-220AB).
The operating junction temperature range is -55°C to 175°C.
The datasheet indicates lead-free and halogen-free construction; RoHS compliance is reported but unverified.
The continuous drain current is 120A (package limited) and 160A (silicon limited) at 25°C.
The typical drain-source on-resistance is 3.3mΩ at 75A, 10V gate drive, with a maximum of 4.2mΩ.