| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
35,000 pcs
|
35000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
30,195 pcs
|
30195 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
1,602 pcs
|
1602 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Spacing | |
| Mounting Type | |
| Tape & Reel |
The Infineon IRFB3207PBF is an N-channel Power MOSFET designed for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching applications.
Key electrical specifications include a Drain-to-Source Breakdown Voltage of 75V and a continuous Drain Current of 170A at 25°C. The Static Drain-to-Source On-Resistance is typically 3.6mΩ and a maximum of 4.5mΩ. The Gate Threshold Voltage is 2.0V.
This MOSFET features a maximum power dissipation of 300W at 25°C and an operating junction temperature range of -55°C to +175°C. Thermal resistance from junction to case is 0.50°C/W, and junction to ambient is 62°C/W for the TO-220 package.
The component is available in a TO-220AB package, suitable for through-hole mounting. It is lead-free and RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.00 | $4.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 170A at 25°C and 120A at 100°C.
The typical static drain-to-source on-resistance is 3.6mΩ.
The drain-to-source breakdown voltage is 75V.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFB3207PBF is supplied in a TO-220AB package.
Yes, the IRFB3207PBF is RoHS3 compliant.
The Moisture Sensitivity Level is 1.