| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,020 pcs
|
5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB3207PBF is a 75V N-Channel HEXFET power MOSFET from Infineon Technologies, designed for high efficiency switching applications. It offers a continuous drain current of 170A at Tc=25°C (calculated based on junction temperature, with a package limitation of 75A) and a pulsed drain current of 300A. The device features a low typical on-resistance of 3.6 mOhm and a maximum of 4.5 mOhm at Vgs=10V, Id=75A. Gate charge is 260 nC at 10V, and input capacitance is 7600 pF at 50V, enabling fast switching performance.
The MOSFET is RoHS3 compliant and has an MSL of 1 (unlimited). It operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 330W at Tc=25°C. The device is housed in a TO-220-3 through-hole package (TO-220AB), suitable for board-level mounting.
Typical applications include high efficiency synchronous rectification in switch-mode power supplies, uninterruptible power supplies, high speed power switching, and hard switched or high frequency circuits. The part is also available in D2Pak (IRFS3207PBF) and TO-262 (IRFSL3207PBF) package variants.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.73 | $3.73 |
| 10+ | $2.45 | $2.45 |
| 100+ | $1.72 | $1.72 |
| 500+ | $1.63 | $1.63 |
| 1,000+ | $1.46 | $1.46 |
| 2,000+ | $1.42 | $1.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
75V minimum.
TO-220-3 through-hole package (TO-220AB).
-55°C to 175°C junction temperature.
Yes, it is marked as RoHS3 compliant.
170A continuous at Tc=25°C, 120A at Tc=100°C, and 300A pulsed.
Typical 3.6 mOhm, maximum 4.5 mOhm at Vgs=10V, Id=75A.