| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,020 pcs
|
40020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
14,000 pcs
|
14000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB3206PBF is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications such as synchronous rectification in switch-mode power supplies and uninterruptible power supplies. The device uses HEXFET technology and supports a drain-to-source voltage of 60V and a continuous drain current of 210A (silicon limited) at 25°C case temperature.
The MOSFET has a typical on-resistance of 2.4mΩ and a maximum on-resistance of 3mΩ at Vgs = 10V and Id = 75A. It offers a gate threshold voltage up to 4V and a maximum gate-to-source voltage of ±20V. Input capacitance is 6540pF at Vds = 50V, and total gate charge is 170nC at Vgs = 10V. The part is rated for single-pulse avalanche energy of 170mJ and peak diode recovery dv/dt of 5V/ns.
Packaged in a TO-220AB (TO-220-3) through-hole package, the IRFB3206PBF supports a maximum power dissipation of 300W at 25°C case temperature. Junction-to-case thermal resistance is 0.5°C/W, and the operating junction temperature range is -55°C to 175°C.
The device is lead-free, halogen-free, and RoHS compliant as stated in the datasheet. It is well-suited for high-speed power switching and hard-switched high-frequency circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.20 | $3.20 |
| 10+ | $2.08 | $2.08 |
| 50+ | $1.59 | $1.59 |
| 100+ | $1.44 | $1.44 |
| 500+ | $1.16 | $1.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRFB3206PBF has a maximum drain-to-source voltage rating of 60V.
The IRFB3206PBF is offered in a TO-220-3 (TO-220AB) through-hole package.
The operating junction and storage temperature range is -55°C to 175°C.
Yes, the datasheet states the IRFB3206PBF is RoHS compliant, lead-free, and halogen-free.
The maximum on-resistance is 3 mΩ at Vgs = 10V and Id = 75A, with a typical value of 2.4 mΩ.
The total gate charge is 170 nC at Vgs = 10V.
The continuous drain current is 210A at Tc=25°C (silicon limited) and 120A wire-bond limited.