IRFB31N20DPBF N-Channel MOSFET with 200V breakdown voltage and 31A continuous drain current. Features low on-resistance of 0.082Ω and is available in a TO-220-3 through-hole package.
Mfr Part #:

IRFB31N20DPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 200V breakdown voltage and 31A continuous drain current. Features low on-resistance of 0.082Ω and is available in a TO-220-3 through-hole package.
✓ Total Stock: 9,577 pcs

IRFB31N20DPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,777 pcs
8777 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
800 pcs
800 pcs On Request 1 On Request On Request 1307+ On Request On Request

IRFB31N20DPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB31N20DPBF Description

Short technical summary and product information.

The IRFB31N20DPBF is an N-channel power MOSFET manufactured by Infineon Technologies. It is designed for high-frequency DC-DC converter applications and other power switching circuits. The device features a drain-source breakdown voltage of 200V and a continuous drain current of 31A at 25°C case temperature.

 

The MOSFET has a maximum drain-source on-resistance of 0.082Ω at Vgs=10V and Id=18A, and a gate threshold voltage ranging from 3.0V to 5.5V. It supports a gate-source voltage of up to ±30V and a pulsed drain current of 124A. The input capacitance is 2370 pF at Vds=25V, and the total gate charge is 107 nC at Vgs=10V.

 

The device is designed for high-efficiency power conversion with low gate-to-drain charge to reduce switching losses. It is fully characterized for capacitance and avalanche energy, simplifying design in applications such as power supplies, motor control, and inverters. The operating junction temperature range is -55°C to 175°C, and power dissipation is 200W at Tc=25°C.

 

The IRFB31N20DPBF comes in a TO-220-3 (TO-220AB) through-hole package, suitable for PCB mounting with thermal management. It is RoHS compliant and lead-free.

IRFB31N20DPBF Quick Information

Product Type: MOSFET
Series: HEXFET
Canonical Name: N-Channel MOSFET, 200V, 31A, TO-220-3
Subcategory: Single MOSFET

IRFB31N20DPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected

IRFB31N20DPBF Features

  • N-channel MOSFET with 200V breakdown voltage.
  • 31A continuous drain current at 25°C.
  • Low on-resistance of 0.082Ω at 10V gate drive.
  • TO-220-3 through-hole package for easy mounting.
  • RoHS compliant and lead-free design.

IRFB31N20DPBF Applications

  • High frequency DC-DC converter applications.
  • Power supply and motor control circuits.
  • Inverter and switching regulator designs.
  • Suitable for harsh thermal environments.

IRFB31N20DPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IRFB31N20DPBF?

The drain-source breakdown voltage is 200V (minimum).

What package is the IRFB31N20DPBF available in?

The IRFB31N20DPBF comes in a TO-220-3 (TO-220AB) through-hole package.

What is the operating temperature range of the IRFB31N20DPBF?

The operating junction temperature range is -55°C to 175°C.

Is the IRFB31N20DPBF RoHS compliant?

RoHS compliant per existing database entry, but not independently verified.

What is the maximum continuous drain current of the IRFB31N20DPBF?

The maximum continuous drain current is 31A at 25°C case temperature, and 21A at 100°C.

What is the on-resistance of the IRFB31N20DPBF?

The maximum on-resistance is 0.082Ω at Vgs=10V and Id=18A.

What is the gate threshold voltage of the IRFB31N20DPBF?

The gate threshold voltage ranges from 3.0V to 5.5V.

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