| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,145 pcs
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1145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Vishay Dale IRFB3077PBF is a high-performance N-Channel HEXFET Power MOSFET. It is designed for applications requiring high efficiency synchronous rectification, uninterruptible power supplies, and high-speed power switching.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 75V and a continuous drain current (ID) of up to 210A at 25°C (silicon limited). The on-state resistance (RDS(on)) is typically 2.8mOhm at VGS = 10V and ID = 210A, with a maximum of 3.3mOhm.
This MOSFET is housed in a TO-220AB package, suitable for through-hole mounting. It offers enhanced body diode dV/dt and dI/dt capability, along with improved gate ruggedness and avalanche characteristics. The operating junction temperature range is -55°C to +175°C.
Applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, high-speed power switching, and hard-switched and high-frequency circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the IRFB3077PBF is 75V.
The typical on-state resistance (RDS(on)) of the IRFB3077PBF is 2.8mOhm at VGS = 10V and ID = 210A.
The continuous drain current (ID) for the IRFB3077PBF is rated at 210A at 25°C (silicon limited) and 150A at 100°C (silicon limited).
The IRFB3077PBF is supplied in a TO-220AB package.
The operating junction and storage temperature range for the IRFB3077PBF is -55°C to +175°C.