IRFB3006PBF The Infineon IRFB3006PBF is a 60V, 195A N-Channel power MOSFET in a TO-220AB package with 2.5mΩ maximum on-resistance.
Mfr Part #:

IRFB3006PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon IRFB3006PBF is a 60V, 195A N-Channel power MOSFET in a TO-220AB package with 2.5mΩ maximum on-resistance.
✓ Total Stock: 750 pcs
$ Price Range: $1.44 - $3.88

IRFB3006PBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
750 pcs
750 pcs On Request 1 On Request On Request On Request On Request On Request

IRFB3006PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB3006PBF Description

Short technical summary and product information.

IRFB3006PBF is a 60V N-Channel Power MOSFET from the HEXFET family, manufactured by Infineon Technologies. It is rated for a package-limited continuous drain current of 195A at Tc=25°C with 10V gate drive, while the silicon limit is 270A. Pulsed drain current reaches 1080A. On-resistance is a maximum of 2.5mΩ (typical 2.1mΩ) at Id=170A and Vgs=10V.

 

This device is designed for high-efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, and high-speed power switching circuits. It supports hard-switched and high-frequency operation with an enhanced body diode dv/dt capability. The maximum gate charge is 300nC at Vgs=10V, and input capacitance is 8970pF at Vds=50V.

 

The MOSFET is offered in a TO-220AB (TO-220-3) through-hole package. It can dissipate up to 375W at a case temperature of 25°C, with a junction-to-case thermal resistance of 0.4°C/W. The operating junction temperature range is -55°C to +175°C.

 

The part is lead-free, RoHS compliant, and halogen-free according to the datasheet. It is supplied in tubes with a standard package quantity of 50 pieces per tube.

IRFB3006PBF Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel Power MOSFET IRFB3006PBF
Subcategory: Single N-Channel MOSFET

IRFB3006PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFB3006PBF Estimated Pricing

Qty Low High
1+ $3.88 $3.88
10+ $2.53 $2.53
50+ $1.96 $1.96
100+ $1.77 $1.77
500+ $1.44 $1.44

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB3006PBF Features

  • N-channel MOSFET rated for 60V Vds.
  • 195A package-limited continuous drain current.
  • Maximum on-resistance only 2.5mΩ.
  • TO-220AB through-hole package.
  • RoHS, lead-free, and halogen-free.

IRFB3006PBF Applications

  • High efficiency synchronous rectification in SMPS.
  • Uninterruptible power supply switching stages.
  • High speed power switching circuits.
  • Hard switched high frequency converters.

IRFB3006PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating?

The drain-to-source voltage rating is 60V.

What package is this MOSFET available in?

It is available in a TO-220-3 through-hole package, with supplier device package TO-220AB.

What is the operating temperature range?

The operating junction temperature range is -55°C to +175°C.

Is the IRFB3006PBF RoHS compliant?

Yes, the datasheet marks it as RoHS compliant, lead-free, and halogen-free.

What is the maximum continuous drain current?

The package-limited continuous drain current is 195A at Tc=25°C with Vgs=10V; the silicon-limited rating is 270A.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 2.5mΩ at Id=170A and Vgs=10V, with a typical value of 2.1mΩ.

What is the gate charge?

The maximum gate charge is 300nC at Vgs=10V.

Home
Account

Categories