IRFB3006GPBF N-Channel MOSFET, 60V drain-source voltage, 195A continuous drain current (package limited), 2.5mOhm on-resistance at 10V. TO-220AB through-hole package.
Mfr Part #:

IRFB3006GPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 60V drain-source voltage, 195A continuous drain current (package limited), 2.5mOhm on-resistance at 10V. TO-220AB through-hole package.
✓ Total Stock: 109 pcs
$ Price Range: $2.07

IRFB3006GPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
109 pcs
109 pcs On Request 1 On Request On Request 1037 On Request On Request

IRFB3006GPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB3006GPBF Description

Short technical summary and product information.

The IRFB3006GPBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 270A (silicon limited) or 195A (package limited). The on-resistance is typically 2.1mOhm and maximum 2.5mOhm at Vgs=10V, enabling low conduction losses.

 

This MOSFET offers a total gate charge of 300nC maximum and input capacitance of 8970pF, making it suitable for high-frequency switching. It is avalanche rated at 320mJ and has a peak diode recovery dv/dt of 10V/ns. The device is housed in a TO-220AB through-hole package with a junction-to-case thermal resistance of 0.4°C/W and can operate over a junction temperature range of -55°C to 175°C.

 

Typical applications include high efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, high speed power switching, and hard switched and high frequency circuits. The IRFB3006GPBF is lead-free and halogen-free compliant.

IRFB3006GPBF Quick Information

Product Type: Power MOSFET
Series: HEXFET
Canonical Name: IRFB3006GPBF N-Channel MOSFET, 60V, 195A, TO-220AB
Subcategory: N-Channel MOSFET

IRFB3006GPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFB3006GPBF Estimated Pricing

Qty Low High
1,000+ $2.07 $2.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB3006GPBF Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • Low on-resistance of 2.5 milliohms maximum.
  • High continuous drain current up to 270A.
  • TO-220AB through-hole package.
  • Lead-free and halogen-free compliant.

IRFB3006GPBF Applications

  • High efficiency synchronous rectification in SMPS.
  • Uninterruptible power supply applications.
  • High speed power switching circuits.
  • Hard switched and high frequency circuits.

IRFB3006GPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFB3006GPBF?

The drain-source voltage (Vdss) is 60V.

What is the continuous drain current rating?

The continuous drain current is 270A at Tc=25°C (silicon limited) and 195A at Tc=25°C (package limited).

What is the on-resistance of this MOSFET?

The maximum on-resistance is 2.5mOhm at Vgs=10V, Id=170A; typical is 2.1mOhm.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package does the IRFB3006GPBF come in?

It is available in a TO-220-3 (TO-220AB) through-hole package.

Is the IRFB3006GPBF RoHS compliant?

Yes, it is listed as RoHS3 compliant, though this status is unverified. The datasheet confirms it is lead-free and halogen-free.

What is the total gate charge?

The maximum total gate charge is 300nC at Vgs=10V; typical is 200nC.

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