IRFB3004PBF N-Channel power MOSFET, 40V drain-source voltage, 195A continuous drain current, 1.75mOhm on-resistance, in a TO-220AB through-hole package.
Mfr Part #:

IRFB3004PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET, 40V drain-source voltage, 195A continuous drain current, 1.75mOhm on-resistance, in a TO-220AB through-hole package.
✓ Total Stock: 202 pcs

IRFB3004PBF Available from 1 distributor

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202 pcs
202 pcs On Request 1 On Request On Request 1050 On Request On Request

IRFB3004PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB3004PBF Description

Short technical summary and product information.

The IRFB3004PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source voltage of 40V and a continuous drain current of 195A (wire bond limited) at 25°C, with a maximum on-resistance of 1.75mOhm at 10V gate drive. The device is designed for high-efficiency switching applications including synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching.

 

Key electrical characteristics include a typical gate threshold voltage of 2V and a maximum of 4V at 250µA, a total gate charge of 240nC at 10V, and an input capacitance of 9200pF. The MOSFET is rated for a maximum power dissipation of 380W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C.

 

The IRFB3004PBF is housed in a TO-220AB through-hole package, suitable for PCB mounting with a thermal resistance junction-to-case of 0.40°C/W. It is lead-free and RoHS compliant.

IRFB3004PBF Quick Information

Product Type: Power MOSFET
Series: HEXFET
Canonical Name: IRFB3004PBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRFB3004PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRFB3004PBF Features

  • N-Channel HEXFET power MOSFET design.
  • 40V drain-source breakdown voltage rating.
  • 195A continuous drain current at 25°C.
  • 1.75mOhm maximum on-resistance at 10V.
  • TO-220AB through-hole mounting package.

IRFB3004PBF Applications

  • High efficiency synchronous rectification in SMPS.
  • Uninterruptible power supply (UPS) circuits.
  • High speed power switching applications.
  • Hard switched and high frequency circuits.

IRFB3004PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFB3004PBF?

The maximum drain-source voltage (Vdss) is 40V.

What is the continuous drain current rating?

The continuous drain current is 195A at Tc=25°C (wire bond limited) and 340A (silicon limited).

What is the on-resistance of this MOSFET?

The maximum on-resistance is 1.75mOhm at Id=195A and Vgs=10V, with a typical value of 1.4mOhm.

What package does the IRFB3004PBF come in?

It comes in a TO-220-3 through-hole package, also known as TO-220AB.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IRFB3004PBF RoHS compliant?

The part is listed as RoHS3 Compliant, though this is unverified.

What is the total gate charge of the IRFB3004PBF?

The maximum total gate charge is 240nC at Vgs=10V.

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