| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
183 pcs
|
183 pcs | On Request | 1 | On Request | On Request | 1025 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB3004GPBF is an N-Channel power MOSFET manufactured by Infineon Technologies. It features a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 195A at case temperature (Tc). The device has a maximum on-resistance (Rds(on)) of 1.75 mOhm at Id=195A and Vgs=10V, ensuring low conduction losses. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=250µA. The MOSFET can handle a maximum power dissipation of 380W at Tc. It is designed for through-hole mounting in a TO-220-3 package (supplier device package TO-220AB). The operating junction temperature range is -55°C to 175°C. This device is suitable for high-current switching applications such as power supplies, motor drives, and DC-DC converters. The gate charge (Qg) is 240 nC at Vgs=10V, and input capacitance (Ciss) is 9200 pF at Vds=25V, indicating moderate switching speed. The maximum gate-to-source voltage is ±20V. The device is RoHS3 compliant and has MSL level 1 (unlimited). Note: Compliance data is unverified.
TO-220-3 (through-hole), supplier device package TO-220AB.
-55°C to 175°C (junction).
Yes, RoHS3 compliant (unverified).
40V.
195A at case temperature (Tc).
1.75 mOhm at Id=195A and Vgs=10V.
4V maximum at Id=250µA.