| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB260NPBF is an N-Channel enhancement mode power MOSFET from Infineon's HEXFET family. It is designed for high frequency DC-DC converters and other switching applications.
Key electrical specifications include a drain-to-source voltage of 200V, continuous drain current of 56A at 25°C, and a maximum on-resistance of 40 mOhm at Vgs=10V. The device can dissipate up to 380W at a case temperature of 25°C. Gate threshold voltage is between 2.0V and 4.0V.
The MOSFET is housed in a standard TO-220AB through-hole package, suitable for a wide range of power conversion designs. It is rated for an operating junction temperature range of -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.08 | $1.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 200V.
The continuous drain current is 56A at 25°C case temperature.
The maximum on-resistance is 40 mOhm at Vgs=10V and Id=34A.
It comes in a TO-220AB through-hole package.
The operating junction temperature range is -55°C to +175°C.
The maximum power dissipation is 380W at 25°C case temperature.