IRFB17N50L The Infineon Technologies IRFB17N50L is an N-Channel Power MOSFET with a 500V drain-source voltage and 16A continuous drain current. It features a low 0.28 Ohm RDS(on) at 10V VGS and comes in a TO-220AB package.
Mfr Part #:

IRFB17N50L

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IRFB17N50L is an N-Channel Power MOSFET with a 500V drain-source voltage and 16A continuous drain current. It features a low 0.28 Ohm RDS(on) at 10V VGS and comes in a TO-220AB package.
✓ Total Stock: 160 pcs
$ Price Range: $2.93

IRFB17N50L Available from 1 distributor

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IRFB17N50L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRFB17N50L Description

Short technical summary and product information.

The Infineon Technologies IRFB17N50L is a high-performance N-Channel Power MOSFET designed for demanding applications. It offers a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 16A at 25°C case temperature, derating to 11A at 100°C.

 

Key electrical characteristics include a low on-resistance (RDS(on)) of 0.28 Ohms at 10V gate-source voltage, contributing to efficient power handling. The device features a low gate charge (Qg max.) of 130 nC, simplifying drive requirements. It also boasts improved gate, avalanche, and dynamic dV/dt ruggedness, along with characterized capacitance and avalanche voltage/current.

 

This MOSFET is housed in a standard TO-220AB package, suitable for through-hole mounting. Its robust design and specifications make it ideal for applications such as switch mode power supplies (SMPS), uninterruptible power supplies (UPS), high-speed power switching, ZVS, high-frequency circuits, and PWM inverters.

 

Operating junction and storage temperatures range from -55°C to +150°C. The device also includes features like low reverse recovery time (trr) and soft diode recovery.

IRFB17N50L Quick Information

Product Type: Power MOSFET
Canonical Name: Infineon Technologies IRFB17N50L N-Channel Power MOSFET
Subcategory: N-Channel

IRFB17N50L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFB17N50L Estimated Pricing

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1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB17N50L Features

  • 500V drain-source voltage rating.
  • 16A continuous drain current.
  • Low 0.28 Ohm on-resistance.
  • Simple gate drive requirements.
  • TO-220AB through-hole package.

IRFB17N50L Applications

  • Ideal for switch mode power supplies.
  • Suitable for uninterruptible power supplies.
  • Used in high-speed power switching.
  • Applicable for ZVS circuits.
  • Designed for PWM inverters.

IRFB17N50L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFB17N50L?

500V.

What is the maximum continuous drain current?

16A at 25°C case temperature, derated to 11A at 100°C.

What is the typical drain-source on-resistance?

0.28Ω at VGS=10V.

What is the operating junction temperature range?

-55°C to +150°C.

What package is the IRFB17N50L available in?

TO-220AB.

What is the maximum power dissipation?

220W at 25°C case temperature.

What is the total gate charge?

130nC maximum.

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