| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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160 pcs
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160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The Infineon Technologies IRFB17N50L is a high-performance N-Channel Power MOSFET designed for demanding applications. It offers a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 16A at 25°C case temperature, derating to 11A at 100°C.
Key electrical characteristics include a low on-resistance (RDS(on)) of 0.28 Ohms at 10V gate-source voltage, contributing to efficient power handling. The device features a low gate charge (Qg max.) of 130 nC, simplifying drive requirements. It also boasts improved gate, avalanche, and dynamic dV/dt ruggedness, along with characterized capacitance and avalanche voltage/current.
This MOSFET is housed in a standard TO-220AB package, suitable for through-hole mounting. Its robust design and specifications make it ideal for applications such as switch mode power supplies (SMPS), uninterruptible power supplies (UPS), high-speed power switching, ZVS, high-frequency circuits, and PWM inverters.
Operating junction and storage temperatures range from -55°C to +150°C. The device also includes features like low reverse recovery time (trr) and soft diode recovery.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
16A at 25°C case temperature, derated to 11A at 100°C.
0.28Ω at VGS=10V.
-55°C to +150°C.
TO-220AB.
220W at 25°C case temperature.
130nC maximum.