Mfr Part #:

IRFB17N50L

Mfr Name: Vishay

IRFB17N50L is an N-Channel Power MOSFET from Vishay Siliconix, rated for 500V drain-source voltage and 16A continuous drain current in a TO-220AB package.

✓ Total Stock: 2,568 pcs

$ Price Range: $6.41

IRFB17N50L Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	2,568 pcs On Request	2568 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFB17N50L Description

Short technical summary and product information.

The IRFB17N50L is an N-Channel Power MOSFET designed for high-speed power switching applications. It features a maximum drain-source voltage of 500V and a continuous drain current of 16A at 25°C case temperature. The device offers a low typical on-resistance of 0.28Ω at Vgs = 10V, with a maximum of 0.32Ω at Id = 9.9A.

This MOSFET is characterized by low gate charge (Qg max 130nC) and fully specified capacitance, making it suitable for switch mode power supplies (SMPS), uninterruptible power supplies (UPS), and high-speed switching circuits. It also provides improved gate, avalanche, and dynamic dV/dt ruggedness.

The device is housed in a TO-220AB through-hole package, which facilitates easy mounting on heatsinks for thermal management. The operating junction temperature range is -55°C to +150°C, with a maximum power dissipation of 220W at 25°C case temperature.

IRFB17N50L Quick Information

Product Type: Power MOSFET

Canonical Name: IRFB17N50L N-Channel Power MOSFET, 500V, 16A, TO-220AB

Subcategory: N-Channel MOSFET

IRFB17N50L Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRFB17N50L Estimated Pricing

Qty	Low	High
1,000+	$6.41	$6.41

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB17N50L Features

N-Channel Power MOSFET rated 500V 16A.
Low typical on-resistance of 0.28 ohms.
Maximum gate charge of 130 nC.
Single pulse avalanche energy 390 mJ.
TO-220AB through-hole package.

IRFB17N50L Applications

Switch mode power supply (SMPS) designs.
Uninterruptible power supply (UPS) circuits.
High speed power switching applications.
Zero voltage switching (ZVS) circuits.
PWM inverter topologies.

IRFB17N50L FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IRFB17N50L?

The maximum drain-source voltage (Vds) is 500V.

What is the continuous drain current rating of the IRFB17N50L?

The continuous drain current (Id) is 16A at Tc = 25°C and 11A at Tc = 100°C.

What is the typical on-resistance of the IRFB17N50L?

The typical drain-source on-resistance (Rds(on)) is 0.28Ω at Vgs = 10V.

What package does the IRFB17N50L come in?

The IRFB17N50L is available in a TO-220AB through-hole package.

What is the operating temperature range of the IRFB17N50L?

The operating junction and storage temperature range is -55°C to +150°C.

Is the IRFB17N50L RoHS compliant?

The IRFB17N50L is listed as RoHS3 Compliant, but this is unverified.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	16 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	130 nC
Input Capacitance (Ciss) (Max) @ Vds	2760 pF
Lead Style	Through Hole
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	220 W
Rds On (Max) @ Id, Vgs	0.32 Ω
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-220AB
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	5 V