| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
47 pcs
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47 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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| Manufacturer Name |
The IRFB16N50KPBF from Infineon Technologies is a HEXFET Power MOSFET designed for demanding applications such as Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies, and high-speed power switching circuits.
This MOSFET offers a Drain-to-Source Breakdown Voltage of 500V and a low On-Resistance (Rds(on)) of 285mOhm at a gate-source voltage of 10V and a drain current of 10A. It has a continuous drain current rating of 17A at 25°C case temperature and 11A at 100°C case temperature, with a maximum power dissipation of 280W at 25°C.
Key electrical characteristics include a total gate charge (Qg) of 60nC, contributing to simple drive requirements. The device is housed in a TO-220AB package, suitable for through-hole mounting.
Benefits of this MOSFET include improved gate, avalanche, and dynamic dv/dt ruggedness, along with fully characterized capacitance and avalanche voltage and current. It is also a lead-free component.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-to-source breakdown voltage (V(BR)DSS) is 500V at VGS = 0V and ID = 250 µA.
The maximum continuous drain current (ID) is 17A at TC = 25°C with VGS at 10V, and 11A at TC = 100°C.
The typical drain-to-source on-resistance (RDS(on)) is 285mΩ at VGS = 10V and ID = 10A.
The IRFB16N50KPBF is available in a TO-220AB through-hole package.
The operating junction and storage temperature range is -55°C to +150°C.
The typical total gate charge (Qg) is 60nC at ID = 17A, VDS = 400V, and VGS = 10V.
The IRFB16N50KPBF is RoHS3 compliant and lead-free.