| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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41 pcs
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41 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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The IRFB16N50K from Infineon Technologies is a HEXFET Power MOSFET designed for applications such as Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies, and high-speed power switching circuits. It offers a breakdown voltage of 500V and a continuous drain current of 17A at 25°C.
Key electrical characteristics include a low RDS(on) of 285mΩ typical at 10A, a gate threshold voltage between 3V and 5V, and low gate charge (Qg) for simple drive requirements. The MOSFET also features improved gate, avalanche, and dynamic dv/dt ruggedness, along with fully characterized capacitance and avalanche ratings.
Packaged in a TO-220AB through-hole configuration, the IRFB16N50K has a maximum power dissipation of 280W at 25°C and an operating junction temperature range of -55°C to +150°C. Its thermal resistance (junction-to-case) is 0.44°C/W.
This component is suitable for hard-switched and high-frequency circuits, benefiting from its ruggedness and efficient performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 500V.
The typical static drain-to-source on-resistance is 285mΩ at VGS = 10V and ID = 10A.
The continuous drain current is 17A at 25°C case temperature and 11A at 100°C case temperature.
The IRFB16N50K is supplied in a TO-220AB package.
The operating junction and storage temperature range is -55°C to +150°C.
The typical total gate charge is 60nC.
It is used in Switch Mode Power Supply (SMPS), Uninterruptible Power Supply, and High Speed Power Switching circuits.