| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,020 pcs
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3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFB13N50APBF is an N-Channel power MOSFET from Vishay Siliconix, designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 500V and a continuous drain current of 14A at 25°C case temperature. The device offers a low on-resistance of 450 mΩ at 10V gate drive, ensuring efficient power conversion.
This MOSFET is characterized by a total gate charge of 81 nC and input capacitance of 1910 pF, enabling fast switching. It is rated for a maximum power dissipation of 250W and can operate over a junction temperature range of -55°C to 150°C. The device also features a single pulse avalanche energy rating of 560 mJ, providing robustness in inductive switching environments.
The IRFB13N50APBF is housed in a TO-220AB package with through-hole mounting, suitable for easy integration into power supply and motor control circuits. It is lead (Pb)-free and RoHS-compliant per the datasheet ordering information. Typical applications include switch mode power supplies (SMPS), uninterruptible power supplies, and high-speed power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.78 | $4.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
14A at 25°C case temperature.
Maximum 450 mΩ at 8.4A drain current and 10V gate-source voltage.
-55°C to 150°C (junction).
TO-220-3 (TO-220AB) through-hole package.
The datasheet indicates the lead-free part number IRFB13N50APbF is RoHS-compliant. The RoHS status from the database is unverified.
Maximum 81 nC at 10V gate-source voltage.