IRFB11N50APBF N-Channel MOSFET rated for 500V drain-source voltage and 11A continuous drain current. Packaged in TO-220AB through-hole.
Mfr Part #:

IRFB11N50APBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET rated for 500V drain-source voltage and 11A continuous drain current. Packaged in TO-220AB through-hole.
✓ Total Stock: 13,920 pcs
$ Price Range: $1.26 - $3.22

IRFB11N50APBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,920 pcs
3920 pcs On Request 1 On Request On Request On Request On Request On Request

IRFB11N50APBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB11N50APBF Description

Short technical summary and product information.

The IRFB11N50APBF is an N-Channel power MOSFET from Vishay, designed for high-voltage switching applications. It features a maximum drain-source voltage of 500V and continuous drain current of 11A at 25°C case temperature.

 

With a maximum on-resistance of 520 mΩ at Vgs=10V and Id=6.6A, this MOSFET offers efficient switching. Gate charge is 52 nC maximum, with typical gate-source charge of 13 nC and gate-drain charge of 18 nC. Input capacitance is 1423 pF at Vds=25V.

 

The device is housed in a TO-220-3 through-hole package (TO-220AB). Maximum power dissipation is 170W at 25°C case temperature. Operating junction temperature range is -55°C to 150°C.

 

Typical applications include switch mode power supplies (SMPS), uninterruptible power supplies, and high-speed power switching. Suitable for offline SMPS topologies such as two-transistor forward, half and full bridge, and power factor correction boost.

IRFB11N50APBF Quick Information

Product Type: MOSFET
Canonical Name: IRFB11N50APBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRFB11N50APBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFB11N50APBF Estimated Pricing

Qty Low High
1+ $3.22 $3.22
10+ $1.84 $1.84
100+ $1.40 $1.40
500+ $1.26 $1.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB11N50APBF Features

  • N-Channel MOSFET rated for 500V drain-source voltage.
  • Continuous drain current of 11A at 25°C case temperature.
  • Low on-resistance of 520 mΩ at 10V gate drive.
  • Gate charge of 52 nC for efficient switching.
  • Through-hole TO-220AB package for easy mounting.

IRFB11N50APBF Applications

  • Ideal for switch mode power supply designs.
  • Used in uninterruptible power supply circuits.
  • Suitable for high-speed power switching applications.
  • Applicable in power factor correction boost converters.

IRFB11N50APBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFB11N50APBF?

500V.

What package does the IRFB11N50APBF come in?

TO-220-3 (TO-220AB) through-hole package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the IRFB11N50APBF RoHS compliant?

The datasheet indicates RoHS compliance, but the status is unverified. The part is listed as RoHS3 Compliant in the database.

What is the continuous drain current at 25°C?

11A.

What is the on-resistance?

520 mΩ maximum at Vgs=10V, Id=6.6A.

What is the gate charge?

52 nC maximum at Vgs=10V.

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