| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB11N50A is an N-Channel power MOSFET from Vishay Siliconix designed for high-voltage switching applications. It features a drain-to-source voltage (Vdss) of 500V and a continuous drain current of 11A at 25°C, making it suitable for power conversion circuits.
Key electrical characteristics include a maximum on-resistance of 520mOhm at 10V gate drive, a total gate charge of 52nC, and an input capacitance of 1423pF. The device is rated for a maximum power dissipation of 170W and can operate over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a through-hole TO-220-3 package (TO-220AB), which provides good thermal performance for medium-power designs. It is commonly used in switch mode power supplies (SMPS), uninterruptible power supplies, and high-speed power switching circuits.
The maximum drain-source voltage (Vdss) is 500V.
The continuous drain current is 11A at Tc = 25°C and 7.0A at Tc = 100°C.
The maximum on-resistance is 520mOhm at Id = 6.6A and Vgs = 10V.
The IRFB11N50A is available in a TO-220-3 through-hole package (TO-220AB).
The operating junction temperature range is -55°C to 150°C.
The maximum total gate charge is 52nC at Vgs = 10V.
The maximum power dissipation is 170W at Tc = 25°C.