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IRFAE50 The Infineon Technologies IRFAE50 is an 800V N-Channel Power MOSFET. It offers a continuous drain current of 7.1A and a low on-state resistance.
Mfr Part #:

IRFAE50

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IRFAE50 is an 800V N-Channel Power MOSFET. It offers a continuous drain current of 7.1A and a low on-state resistance.
✓ Total Stock: 5 pcs
$ Price Range: $2.93

IRFAE50 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
5 pcs
On Request
5 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRFAE50 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRFAE50 Description

Short technical summary and product information.

The IRFAE50 from Infineon Technologies is a high-reliability N-Channel HEXFET® Power MOSFET. It is designed using advanced MOSFET technology to achieve very low on-state resistance combined with high transconductance.

 

Key electrical specifications include a Drain-to-Source Breakdown Voltage (BVDSS) of 800V and a continuous drain current (ID) of 7.1A at 25°C. The static drain-to-source on-resistance (RDS(on)) is a maximum of 1.2Ω at VGS = 10V and ID = 4.5A. The device also features repetitive avalanche ratings and dynamic dv/dt rating.

 

This MOSFET is housed in a TO-204AA (TO-3) through-hole package, making it suitable for various applications. Its operating junction and storage temperature range is -55°C to +150°C.

 

The IRFAE50 is well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.

IRFAE50 Quick Information

Product Type: MOSFET
Series: IRF
Canonical Name: IRFAE50 N-Channel HEXFET Power MOSFET
Subcategory: Power MOSFET

IRFAE50 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFAE50 Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFAE50 Features

  • 800V N-Channel HEXFET Power MOSFET
  • 7.1A continuous drain current
  • 1.2Ω maximum on-resistance
  • Repetitive avalanche and dv/dt ratings
  • TO-204AA through-hole package

IRFAE50 Applications

  • Switching power supplies
  • Motor controls
  • Inverters and choppers
  • Audio amplifiers
  • High energy pulse circuits

IRFAE50 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage of the IRFAE50?

800V minimum at VGS=0V, ID=1.0mA.

What package does the IRFAE50 come in?

TO-204AA through-hole package.

What is the operating junction temperature range?

-55°C to +150°C.

What is the continuous drain current rating?

7.1A at TC=25°C with VGS=10V.

What is the on-resistance of the IRFAE50?

Maximum 1.2Ω at VGS=10V and ID=4.5A.

What is the maximum power dissipation?

150W at TC=25°C.

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