| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23 pcs
|
23 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF9Z34S is a P-Channel enhancement mode power MOSFET from Vishay Dale. It is designed for high-current switching applications and features a drain-source voltage rating of 60V, maximum continuous drain current of 18A at Tc=25°C, and 140 mOhm maximum on-resistance with Vgs=10V. The device can dissipate up to 88W at case temperature 25°C and operates over a junction temperature range of -55°C to 175°C. Gate charge is 34 nC typical, and input capacitance is 1100 pF at Vds=25V. The MOSFET is fully avalanche rated with a single pulse avalanche energy of 370 mJ. It is housed in a surface mount D2PAK (TO-263) package, suitable for automated assembly and high power density designs.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $3.00 | $3.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
18A at Tc=25°C, 13A at Tc=100°C.
140 mOhm max at Vgs=10V, Id=11A.
-55°C to 175°C junction temperature.
D2PAK (TO-263) surface mount.
The part is listed as RoHS3 compliant, but this is unverified low-confidence data.
4V max at Id=250µA.