| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF9Z34NSPBF is a P-Channel enhancement mode MOSFET from Infineon Technologies. It features a maximum drain-source voltage of 55V and a continuous drain current of 19A when the case temperature is maintained. The device offers a maximum on-resistance of 100mOhm at a gate drive of 10V and drain current of 10A, ensuring efficient power switching.
Gate charge characteristics include a maximum total gate charge of 35nC at 10V gate voltage, and input capacitance is rated at 620pF at 25V drain-source voltage. The maximum gate threshold voltage is 4V at 250µA drain current, with a maximum gate-source voltage rating of ±20V.
Power dissipation is rated at 3.8W at ambient temperature and 68W at case temperature. The operating junction temperature range spans from -55°C to 175°C, making it suitable for demanding thermal environments.
The device is housed in a surface-mount D2PAK package (TO-263-3), which offers a compact footprint for automated assembly. Mounting type is surface mount, and the supplier device package is D2PAK.
The part is offered in surface-mount D2PAK (TO-263-3) package.
The junction temperature range is -55°C to 175°C.
The component is listed as RoHS3 compliant, but this is unverified.
The maximum drain-source voltage is 55V.
The continuous drain current is 19A at case temperature.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum on-resistance is 100mOhm at 10A drain current and 10V gate-source voltage.