| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,470 pcs
|
60470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
17,020 pcs
|
17020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| Power Dissipation | |
| Technology |
The Infineon IRF9Z34NPBF is a P-Channel MOSFET belonging to the Hexfet® technology family. It is designed for applications requiring a drain-source voltage of -55V and can handle a continuous drain current of up to -19A. The device has a maximum power dissipation of 68W.
This MOSFET features a gate charge of 23.3 nC and an on-state resistance of 100 mOhms. The gate-source voltage rating is 20V. The IRF9Z34NPBF is a unipolar transistor.
It is packaged in a TO-220AB case and utilizes through-hole (THT) mounting. The component is supplied in a tube.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. However, these compliance details are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55V
-19A
68W
100 mOhms
P-MOSFET
TO220AB