SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,100 pcs
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1100 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request | |
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185 pcs
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185 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF9Z34N is a P-Channel Power MOSFET manufactured by Vishay Dale, designed for efficiency and reliability in various applications. It features advanced processing techniques for extremely low on-resistance per silicon area, combined with fast switching speeds and a ruggedized device design characteristic of HEXFET Power MOSFETs.
Key electrical specifications include a maximum drain-source voltage (Vds) of 55V, a continuous drain current (Id) of 19A, and a maximum gate-source voltage (Vgs) of 10V. The on-resistance (Rds(on)) is typically 0.1 Ohms, and the maximum power dissipation (Pd) is 56W. The device operates at a maximum temperature of 175°C.
This MOSFET is housed in a TO-220 package, which is widely used in commercial-industrial applications for power dissipation levels up to approximately 50 watts. The low thermal resistance and cost-effectiveness of the TO-220 package contribute to its industry acceptance. The IRF9Z34N is suitable for a wide variety of applications requiring a reliable P-Channel MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRF9Z34N is 55V.
The continuous drain current of the IRF9Z34N is 19A.
The typical on-resistance of the IRF9Z34N is 0.1 Ohms.
The IRF9Z34N has a maximum operating temperature of 175°C.
The IRF9Z34N is supplied in a TO-220 package.
