| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The Infineon Technologies IRF9Z34 is a P-Channel MOSFET housed in a TO-220AB package. This component is suitable for applications requiring a breakdown voltage of -55V and offers a maximum on-resistance (RDS(on)) of 100mΩ. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 56W.
Key electrical characteristics include a threshold voltage of -4V and an input capacitance of 620pF. The MOSFET also exhibits a continuous drain current rating of -19A, with typical rise and fall times of 55ns and 41ns, respectively. Its through-hole mounting type makes it convenient for integration into various circuit designs.
This MOSFET is specified with a RoHS3 compliant status, an MSL rating of 1, and REACH unaffected status. These compliance details are important for manufacturers adhering to regulatory standards in their product development.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the IRF9Z34 is -55V.
The maximum on-resistance (RDS(on)) for the IRF9Z34 is 100mΩ.
The IRF9Z34 comes in a TO-220AB package.
The IRF9Z34 operates between -55°C and 175°C.
The IRF9Z34 is RoHS3 compliant.